Magnetron sputtering is the main alternative to evaporation for the deposition of metal films, e.g. in microelectronics manufacturing. The physical vapor deposition (PVD) technique has better step coverage than evaporation and is better at producing composite materials and alloy layers. The operating principle of magnetron sputtering involves high-energy ions in an inert gas plasma impacting a target containing the material to be deposited.Due to the momentum exchange between ions and atoms in the target, the material is ejected from the target. The ejected material eventually forms a thin film of the desired thickness on the substrate. We have extensive experience in many types of magnetron sputtering processes, including:
The sputtering process depends on the target material chosen, as conductive and insulating materials behave differently during the process. In the case of elemental metal deposition, simple DC sputtering is often preferred. During the deposition of insulating materials, RF plasma must be used to prevent charge buildup on the target surface.By including a reactive gas, such as oxygen, in the plasma during the sputtering process, thin films with atoms bonded from the reactive gas can be obtained. The PVD platforms offered utilize magnetron sputtering in different configurations. However, if multiple thin film materials need to be deposited, co-deposition can be achieved in a single module, the platform for high-volume and reliable production.